首页 >NP80N04MDG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP80N04MDG | N-Channel 40-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •SynchronousRectification •PowerSupplies | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
NP80N04MDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
NP80N04MDG | Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 40-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •SynchronousRectification •PowerSupplies | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel4-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
N-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP80N04MDG
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
isc |
2024 |
TO-220 |
10000 |
国产品牌isc,可替代原装 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-220 |
12500 |
瑞萨全系列在售,终端可出样品 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBSEMI |
19+ |
T0-220 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
R |
23+ |
TO220 |
10000 |
公司只做原装正品 |
询价 | ||
NEC |
08+(pbfree) |
TO-220AB |
8866 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-220AB |
询价 | ||
VB |
21+ |
T0-220 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 |
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相关库存
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