首页 >NP80N055DHE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP80N055DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP80N055DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2900 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2900 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2400pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2900 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP80N055DHE
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-262AA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
08+(pbfree) |
TO-262 |
8866 |
询价 | |||
23+ |
N/A |
46380 |
正品授权货源可靠 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-262 |
询价 | ||
isc |
2024 |
I2PAK/TO-262 |
175 |
国产品牌isc,可替代原装 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NEC |
23+ |
TO-252 |
9500 |
专业优势供应 |
询价 | ||
NEC |
23+ |
TO-262 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
R |
23+ |
TO263 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
R |
23+ |
TO263 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
原厂 |
2020+ |
TO-263 |
20000 |
公司代理品牌,原装现货超低价清仓! |
询价 |
相关规格书
更多- NP80N055DHE-S12-AY
- NP80N055DLE-S12-AY
- NP80N055EHE-E1-AY
- NP80N055ELE
- NP80N055ELE-E2-AY
- NP80N055KHE-E1-AY
- NP80N055KLE
- NP80N055KLE-E2-AY
- NP80N055MDG-S18-AY
- NP80N055MHE-AY
- NP80N055MLE
- NP80N055NDG
- NP80N055NHE
- NP80N055NLE
- NP80N055PDG
- NP80N055PDG-E2B-AY
- NP80N06MLG-S18-AY
- NP80N06NLG-S18-AY
- NP80N06PLG-E1B-AY
- NP82
- NP826AL
- NP826GY
- NP826LA
- NP826W
- NP82N04MDG
- NP82N04MLG-S18-AY
- NP82N04MUG-S18-AY
- NP82N04NDG-S18-AY
- NP82N04NUG-S18-AY
- NP82N04PUG-E1-AY
- NP82N055CHE
- NP82N055CHE-S12-AZ
- NP82N055CLE-S12-AZ
- NP82N055DHE-S12-AY
- NP82N055DLE-S12-AY
- NP82N055EHE-E1-AY
- NP82N055ELE
- NP82N055ELE-E2-AY
- NP82N055KHE-E1-AY
- NP82N055KHE-E2-AY
- NP82N055KLE-E1-AY
- NP82N055MHE
- NP82N055MLE
- NP82N055MUG
- NP82N055NHE
相关库存
更多- NP80N055DLE
- NP80N055EHE
- NP80N055EHE-E2-AY
- NP80N055ELE-E1-AY
- NP80N055KHE
- NP80N055KHE-E2-AY
- NP80N055KLE-E1-AY
- NP80N055MDG
- NP80N055MHE
- NP80N055MHE-S18-AY
- NP80N055MLE-S18-AY
- NP80N055NDG-S18-AY
- NP80N055NHE-S18-AY
- NP80N055NLE-S18-AY
- NP80N055PDG-E1B-AY
- NP80N06MLG
- NP80N06NLG
- NP80N06PLG
- NP80N06PLG-E2B-AY
- NP826
- NP826BK
- NP826I
- NP826OW
- NP82AL
- NP82N04MDG-S18-AY
- NP82N04MUG
- NP82N04NDG
- NP82N04NLG-S18-AY
- NP82N04PDG-E1-AY
- NP82N04PUG-E1-AZ
- NP82N055CHE_07
- NP82N055CLE
- NP82N055DHE
- NP82N055DLE
- NP82N055EHE
- NP82N055EHE-E2-AY
- NP82N055ELE-E1-AY
- NP82N055KHE
- NP82N055KHE-E1-AZ
- NP82N055KLE
- NP82N055KLE-E2-AY
- NP82N055MHE-S18-AY
- NP82N055MLE-S18-AY
- NP82N055MUG-S18-AY
- NP82N055NHE-S18-AY
