首页 >NDP10N60ZG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtomini-mizeon-stateresistance,providesuperiorswitchingperfor-mance,andwithstandhighenergypul | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelIGBT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
10A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
10A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
10A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
10A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP10N60Eissupplied | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
600VN-ChannelEnhancementModeMOSFET FEATURES •10A,600V,RDS(ON)=1.0Ω@VGS=10V,ID=5.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
600VN-ChannelEnhancementModeMOSFET FEATURES •10A,600V,RDS(ON)=1.0Ω@VGS=10V,ID=5.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SuperhighdensecelldesignforlowRDS(ON). | Samhop 三合微科 | Samhop | ||
N-ChannelMOSFET | semiWell semiWell | semiWell | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
NDP10N60ZG
- 制造商：
ONSEMI
- 制造商全称：
ON Semiconductor
- 功能描述：
N-Channel Power MOSFET 0.65 ?, 600 Volts
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
TO-220 |
175 |
国产品牌isc,可替代原装 |
询价 | ||
ON |
23+ |
TO-TO-220 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
ON/安森美 |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
ON/安森美 |
22+ |
TO-220 |
97042 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ON/安森美 |
22+ |
TO-220 |
97042 |
询价 | |||
ON/安森美 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON-安森美 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NDP/芯谭微 |
23+ |
SOP-8 |
80000 |
公司原装现货专门为工厂终端客户配单欢迎咨询下单 |
询价 |
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