N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.68 Kbytes 页数：2 Pages

ISC

无锡固电

Active power factor correction

NTS500 Series 500 Watts Total Power: 200 - 500 Watts Input Voltage: 85 - 264 Vac 120 - 300 Vdc # of Outputs: Single Special Features • Active power factor correction • IEC EN61000-3-2 compliance • Remote sense • Power fail and remote inhibit • Single wir

文件：457.13 Kbytes 页数：3 Pages

EMERSON-NETWORKPOWER

艾默生

Active power factor correction

文件：696.22 Kbytes 页数：3 Pages

EMERSON-NETWORKPOWER

艾默生

Active power factor correction

NTS500 Series 500 Watts Total Power: 200 - 500 Watts Input Voltage: 85 - 264 Vac 120 - 300 Vdc # of Outputs: Single SPECIAL FEATURES ■ Active power factor correction ■ IEC EN61000-3-2 compliance ■ Remote sense ■ Power fail and remote inhibit ■ Singl

文件：929.76 Kbytes 页数：5 Pages

ARTESYN