N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件：360.46 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wi

文件：180.74 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.6 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道增强型场效应晶体管 60V，75A，13mΩ

这些N沟道增强模式功率场效应晶体管采用飞兆半导体专有的高单元密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低通态电阻，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件特别适合需要快速开关、低线路内功率损耗以及抗瞬变能力的汽车、DC/DC转换器、PWM电机控制和其他电池供电电路等低电压应用。 •75 A，60 V。 RDS(ON) = 0.013 Ω @ VGS= 10 V。\n•在高温下额定的临界DC电气参数。\n•耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。\n•175°C最大结温额定值。\n•采用高密度单元设计，可实现极低的RDS(ON)。\n•TO-220和TO-263 (D2PAK)封装，适用于通孔和表面贴装应用。;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：64.959 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体