N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件：74 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 42mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.5 Kbytes 页数：2 Pages

ISC

无锡固电

LOW NOISE Ku-K BAND GaAs MESFET

LOW NOISE Ku-K BAND GaAs MESFET

文件：279.05 Kbytes 页数：7 Pages

NEC

瑞萨

REFLECTIVE OBJECT SENSORS

Description: OPB710and OPB710Fconsist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. OPB730and OPB730Fconsist of a gallium arsenide infrared emitting diode and an NPN silicon photodarlington. Features: • Choice of phototransistor or photodarlington out

文件：220.53 Kbytes 页数：2 Pages

OPTEK

Reflective Object Sensor

文件：188.69 Kbytes 页数：4 Pages

OPTEK