NDP508BE中文资料PDF规格书
NDP508BE规格书详情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in²) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
产品属性
- 型号:
NDP508BE
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
N-Channel Enhancement Mode Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2022+ |
LL34 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
NS |
2023+ |
TO220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NS |
23+ |
NA/ |
45 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
NS |
9806+ |
TO220 |
45 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NS |
2022 |
TO220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
NDP/芯谭微 |
23+ |
SOT23-6 |
35000 |
特价出售公司原装现货可发货订货只做原装 |
询价 | ||
ON |
23+ |
TO-220 |
35890 |
询价 | |||
KA |
6000 |
面议 |
19 |
TO-220 |
询价 | ||
NS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
NSC |
05+ |
原厂原装 |
313 |
只做全新原装真实现货供应 |
询价 |