N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：68.32 Kbytes 页数：6 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.68 Kbytes 页数：2 Pages

ISC

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MOSFET N-CH 60V 15A TO-220

ONSEMI

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3-phase 4-line 500VAC

文件：310.14 Kbytes 页数：4 Pages

SOSHIN

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51?? Digit Multimeters

文件：110.92 Kbytes 页数：4 Pages

NI

恩艾

51?? Digit Multimeters

文件：110.92 Kbytes 页数：4 Pages

NI

恩艾