N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件：74 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.99 Kbytes 页数：2 Pages

ISC

无锡固电

POWER RECTIFIERS(4.0A,500-1000V)

文件：127.66 Kbytes 页数：2 Pages

MOSPEC

统懋

8-BIT INTELLIGENT CONTROLLER UNIT ICU Three Timer/PWMs, ADC, WDG

Memories ■ Up to 4 Kbytes OTP ■ 128 bytes of RAM ■ Readout Protection Core ■ Register File Based Architecture ■ 55 instructions ■ Hardware multiplication and division ■ Decision Processor for the implementation of Fuzzy Logic algorithms Clock and Power Supply ■ Up to 20 MHz clock frequen

文件：906.02 Kbytes 页数：84 Pages

STMICROELECTRONICS

意法半导体

4A TRIACS

文件：118 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体