N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

MOSFET N-CH 30V 25A TO-220AB

ONSEMI

安森美半导体

TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

GENERAL DESCRIPTION Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brus

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PHI

PHI

6.0 AMP SILICON BRIDGE???

6.0 AMP SILICON BRIDGE VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Ampere

文件：90.77 Kbytes 页数：2 Pages

SURGE

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting

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NEC

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