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型号	下载订购	功能描述	制造商上传企业	LOGO
NDP6030	文件：357.86 Kbytes Page：7 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件：357.86 Kbytes 页数：7 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDP6030	文件：56.6 Kbytes Page：4 Pages	P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件：56.6 Kbytes 页数：4 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDP6030	文件：296.17 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 46A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：296.17 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NDP6030	文件：56.17 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor 文件：56.17 Kbytes 页数：4 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDP6030L	文件：295.72 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：295.72 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NDP6030L	文件：357.86 Kbytes Page：7 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件：357.86 Kbytes 页数：7 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDP6030PL	文件：56.6 Kbytes Page：4 Pages	P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件：56.6 Kbytes 页数：4 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDP6030PL	文件：300 bytes Page：1 Pages	MOSFET P-CH 30V 30A TO-220	ONSEMI 安森美半导体	ONSEMI

详细参数

型号：
NDP6030
功能描述：
MOSFET DISC BY MFG 2/02
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市弘为电子有限公司	NDP6030	FAIRCHILD	24+	原厂封装	3179	原装现货假一罚十	询价
深圳市利加科技有限公司	NDP6030	FSC	16+	TO-220	10000	全新原装现货	询价
深圳市河锋鑫科技有限公司	NDP6030	KA	22+	TO-220	6000	十年配单,只做原装	询价
上海磐岳电子有限公司	NDP6030	FSC	2023+	TO-220	5800	进口原装,现货热卖	询价
深圳市安罗世纪电子有限公司	NDP6030	FAIRCHILD	2023+	SMD	3179	安罗世纪电子只做原装正品货	询价
深圳市昌和盛利电子有限公司	NDP6030	ON	26+	TO-220	28610	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市一线半导体有限公司	NDP6030PL	FAIRCHILD	24+	TO-220	8866		询价
芯有半导体（深圳）有限公司	NDP6030L	FAIRCHILD	0314/0125/02	TO-220	1145	全新原装现货100真实自己公司	询价
深圳市华来深电子有限公司	NDP6030PL	FAIRCHI	23+	TO-220	8650	受权代理!全新原装现货特价热卖!	询价
深圳市拓亿芯电子有限公司	NDP6030L	FSC	25+	TO-220	30000	代理全新原装现货,价格优势	询价

更多NDP6030供应商更新时间2026-4-20 13:32:00

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