高压功率MOSFETs

SFF10N60 N沟道增强型高压功率MOS场效应晶体管,采用业界领先的VDMOS工艺技术制造而成。具有低导通损耗，耐高压，抗冲击能力强等特点。

HI-SEMICON

深鸿盛电子

N-Channel MOSFET

文件：99.16 Kbytes 页数：3 Pages

SEMIWELL

矽门微

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher

文件：543.94 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

文件：88.65 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

文件：88.65 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体