N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

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STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

文件：1.10771 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10769 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

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SILAN

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