N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

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STMICROELECTRONICS

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丝印：GP10NC60KD；Package：TO-220；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

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STMICROELECTRONICS

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N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件：379.54 Kbytes 页数：17 Pages

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N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件：526.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

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10 A, 600 V short-circuit rugged IGBT

文件：613.22 Kbytes 页数：20 Pages

STMICROELECTRONICS

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Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20A 60W TO220

STMICROELECTRONICS

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10 A、600 V短路保护IGBT，TO-220封装

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. • Lower on voltage drop (VCE(sat)) \n• Very soft ultra fast recovery antiparallel diode \n• Lower CRES / CIES ratio (no cross-conduction susceptibility) \n• Short-circuit withstand time 10μs;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20A 65W TO220

STMICROELECTRONICS

意法半导体