Description

These devices are very fast IGBTs developed

using advanced PowerMESH™ technology. This

process guarantees an excellent trade-off

between switching performance and low on-state

behavior. These devices are well-suited for

resonant or soft-switching applications.

Features

 Lower on voltage drop (VCE(sat))

 Lower CRES / CIES ratio (no cross-conduction

susceptibility)

 Very soft ultra fast recovery antiparallel

diode

 Short-circuit withstand time 10 μs

Applications

 High frequency motor controls

 SMPS and PFC in both hard switch and

resonant topologies

 Motor drives

STGP10NC60KD属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGP10NC60KD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。