20 A、600 V短路保护IGBT

These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. • Low on voltage drop (VCE(sat)) \n• Low CRES / CIES ratio (no cross-conduction susceptibility) \n• Short-circuit withstand time 10 μs \n• IGBT co-packaged with ultrafast free-wheeling diode;

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20 A - 600 V - short circuit rugged IGBT

文件：586.14 Kbytes 页数：17 Pages

STMICROELECTRONICS

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Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 35A 125W TO220

STMICROELECTRONICS

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N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT

文件：289.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

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20 A, 600 V fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium

文件：423.41 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

20 A, 600 V fast IGBT with Ultrafast diode

文件：535.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体