650 V、15 A沟槽栅场截止低损耗M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.55 V (typ.) @ IC = 15 A \n• Tight parameter distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

ST

意法半导体

Trench gate field-stop IGBT M series, 650 V, 15 A low loss

文件：900.09 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT M SE

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT M series, 650 V, 15 A low loss

文件：1.08019 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体