Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low loss

文件：1.08019 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT M series, 650 V, 15 A low loss

文件：1.08019 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT M series, 650 V 15 A low loss

文件：910.69 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体