Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

文件：398.27 Kbytes 页数：6 Pages

ISC

无锡固电

Trench gate field-stop IGBT M series, 650 V 15 A low loss

文件：910.69 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

沟槽栅场截止IGBT，M系列，650 V、15 A，低损耗

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.55 V (typ.) @ IC = 15 A \n• Tight parameter distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

ST

意法半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT M SE

STMICROELECTRONICS

意法半导体