600 V、30 A高速沟槽栅场截止HB系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• Minimized tail current \n• Tight parameter distribution \n• Positive VCE(sat) temperature coefficient \n• Very fast soft recovery antiparallel diode;

ST

意法半导体

丝印：GP30H60DFB；Package：TO-220；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency conve

文件：1.75373 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT, HB

STMICROELECTRONICS

意法半导体

600 V, 30 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.95033 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency convert

文件：1.43779 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency conve

文件：1.74476 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体