600V N-Channel Enhancement Mode MOSFET

FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：190.06 Kbytes 页数：5 Pages

PANJIT

強茂

600V N-Channel Enhancement Mode MOSFET

Panjit

強茂

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement RoHS Compliant & Halogen-Free

文件：120.24 Kbytes 页数：7 Pages

RECTRON

丽正国际

Super high dense cell design for low RDS(ON).

文件：459.45 Kbytes 页数：11 Pages

Samhop

三合微科

N-Channel MOSFET

文件：99.16 Kbytes 页数：3 Pages

semiWell

矽门微