600V N-Channel Enhancement Mode MOSFET

FEATURES • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：193.83 Kbytes 页数：5 Pages

PANJIT

強茂

600V N-Channel Enhancement Mode MOSFET

Panjit

強茂

N-CHANNEL MOSFET in a TO-252 Package

文件：304.45 Kbytes 页数：5 Pages

RECTRON

丽正国际

Short Circuit Rated IGBT

文件：527.63 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters

文件：616.11 Kbytes 页数：8 Pages

Fairchild

仙童半导体