600V，10A 短路额定 IGBT

安森美半导体的 RUFD 系列绝缘门极双极晶体管 (IGBT) 提供低导通和开关损耗以及短路耐受性。RUFD 系列适用于电机控制、不中断电源 (UPS) 和通用逆变器等短路耐受性为必需特性的应用。 •额定短路时间 10 us，需 T C = 100°C、V GE = 15 V\n•高速开关\n•低饱和电压： V CE(sat) = 2.2 V，需 I C = 10 A\n•高输入阻抗\n•CO-PAK、IGBT 及 FRD： trr=42 ns（典型值）;

ONSEMI

安森美半导体

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

文件：598.59 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 16A 75W TO3P

ONSEMI

安森美半导体

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

INFINEON

英飞凌

Fast S-IGBT in NPT-technology

文件：506.86 Kbytes 页数：12 Pages

INFINEON

英飞凌

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

文件：401.72 Kbytes 页数：12 Pages

INFINEON

英飞凌