isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel Power MOSFET 500 V, 0.52 

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ONSEMI

安森美半导体

N-Channel Power MOSFET 500 V, 0.52 

文件：119.18 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

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ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

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PHI

PHI

PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

文件：102.93 Kbytes 页数：9 Pages

PHI

PHI