isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFETs ISOPLUS247™ F-Class: MegaHertz Switching (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Sw

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IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247 Q CLASS

HiPerFET™ Power MOSFETs ISOPLUS247™ Q CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

文件：160.52 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

HiPerFET™ Power MOSFETs ISOPLUS247™ Q CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

文件：33.66 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

Littelfuse

力特