Polar Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • miniBLOC, with Aluminium nitride isolation • Avalanche Rated • Low package inductance • Fast intrinsic diode Advantages • Low gate drive requirement • High power density Applicati

文件：119.16 Kbytes 页数：4 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 52A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 160mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · AC and DC Motor Drivers · DC-DC Converters · Laser Drives

文件：459.96 Kbytes 页数：2 Pages

ISC

无锡固电

Polar Power MOSFET HiPerFET

文件：126.7 Kbytes 页数：4 Pages

IXYS

艾赛斯