Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.214Ω(Typ.)

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Fairchild

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：685.47 Kbytes 页数：9 Pages

Fairchild

仙童半导体

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

HEXFET Power MOSFET

文件：174.94 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) • Sink

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VishayVishay Siliconix

威世威世科技公司