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IRFG110

POWERMOSFETTHRU-HOLE(MO-036AB)

IRF

International Rectifier

IRFL110

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110TRPBF

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFL110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFM110A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    IRFD110R

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR

供应商型号品牌批号封装库存备注价格
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
IR-VISHAY
11+
DIP4
19283
原装现货
询价
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
询价
HAR
24+
DIP
4500
只做原装正品现货 欢迎来电查询15919825718
询价
GESS
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
IR-VISHAY
23+
DIP4
19286
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
06+
原厂原装
4483
只做全新原装真实现货供应
询价
HARRIS
24+/25+
70
原装正品现货库存价优
询价
更多IRFD110R供应商 更新时间2025-5-17 10:00:00