Power MOSFET

文件：2.02105 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.289 Ω(Typ.)

文件：263.83 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

QUAD N-CHANNEL ENHANCEMENT MOSFETS

文件：25.05 Kbytes 页数：2 Pages

SEME-LAB

4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use

文件：60.03 Kbytes 页数：7 Pages

INTERSIL