Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：135.44 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：135.44 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power sw

文件：160.96 Kbytes 页数：9 Pages

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文件：302.95 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：303.68 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：303.68 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Infineon

英飞凌