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IRFBE30

Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

IRFBE30

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES •Dynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRFBE30

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFBE30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFBE30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFBE30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFBE30L

HEXFET짰 Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

IRFBE30L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP

VishayVishay Siliconix

威世科技威世科技半导体

IRFBE30L

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技威世科技半导体

IRFBE30LPBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

详细参数

  • 型号:

    IRFBE30

  • 功能描述:

    MOSFET 800V Single N-Channel HEXFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2021+
TO220
16800
全新原装正品,自家优势现货
询价
IR
24+
TO 220
161347
明嘉莱只做原装正品现货
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
06+
TO-220
8000
全新原装 绝对有货
询价
IR
24+
TO-220
5225
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
2020+
79
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
23+
TO-220
9896
询价
IR
23+
TO-220
10000
原装正品,假一罚十
询价
IR
23+
TO-220
6680
全新原装优势
询价
更多IRFBE30供应商 更新时间2025-5-29 18:25:00