Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa

文件：167.56 Kbytes 页数：6 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=4.1A@ TC=25℃ ·Drain Source Voltage- VDSS=800V(Min) ·Static Drain-Source On-Resistance RDS(on) = 3Ω(Max)@VGS= 10V ·100 avalanche tested DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.37 Kbytes 页数：2 Pages

ISC

无锡固电

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. FEATURES • Dynam

文件：1.96556 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：1.45144 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：1.60026 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：585.44 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

文件：517.21 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of P

文件：1.20346 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa

文件：473.61 Kbytes 页数：6 Pages

IRF

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa

文件：588.09 Kbytes 页数：10 Pages

IRF