丝印：FB4110；Package：TO-220；100 V N-Channel MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced bod

文件：815.41 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Halogen-Free Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supp

文件：308.74 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Sw

文件：710.29 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability 175°C Operating Temperature Automotive [Q101] Qualified Applications High Efficiency Synchronous Rectification in S

文件：306.08 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High S

文件：314.6 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.36 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：193 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：268.02 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：342.04 Kbytes 页数：13 Pages

IRF

High frequency DC-DC converters

Benefits ● Low Gate-to-Drain Charge to Reduce    Switching Losses ● Fully Characterized Capacitance Including    Effective COSS to Simplify Design, (See App.    Note AN1001) ● Fully Characterized Avalanche Voltage    and Current ● Lead-Free Applications ● High frequency DC-DC converters

文件：714.57 Kbytes 页数：13 Pages

INFINEON

英飞凌