Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

文件：139.73 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=23A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.09Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.81 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

文件：139.73 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=24A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.1Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.78 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A)

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：196.53 Kbytes 页数：11 Pages

IRF

SMPS MOSFET

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：275.78 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)

SMPS MOSFET VDSS RDS(on) max ID 200V 0.040Ω 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

文件：90.7 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)

SMPS MOSFET VDSS RDS(on) max ID 200V 0.040Ω 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

文件：90.7 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：167 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

文件：463.34 Kbytes 页数：11 Pages

IRF