Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)

SMPS MOSFET VDSS RDS(on) max ID 200V 0.040Ω 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

文件：90.7 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

文件：338.85 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：167 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

文件：175.96 Kbytes 页数：9 Pages

IRF

High frequency DC-DC converters

文件：175.96 Kbytes 页数：9 Pages

IRF

采用 TO-220 封装的 200V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌