Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

文件：139.73 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=23A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.09Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.81 Kbytes 页数：2 Pages

ISC

无锡固电

High frequency DC-DC converters

文件：1.18321 Mbytes 页数：11 Pages

KERSEMI

N-Channel 150 V (D-S) MOSFET

文件：1.81375 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

HEXFET짰Power MOSFET

文件：283.59 Kbytes 页数：12 Pages

IRF

High frequency DC-DC converters

文件：284.56 Kbytes 页数：12 Pages

IRF

采用 TO-220AB 封装的 150V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌