Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)

SMPS MOSFET VDSS RDS(on) max ID 200V 0.040Ω 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

文件：90.7 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)

SMPS MOSFET VDSS RDS(on) max ID 200V 0.040Ω 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

文件：90.7 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：167 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

文件：338.85 Kbytes 页数：2 Pages

ISC

无锡固电

High frequency DC-DC converters

文件：175.96 Kbytes 页数：9 Pages

IRF

High frequency DC-DC converters

文件：175.96 Kbytes 页数：9 Pages

IRF

采用 TO-220 封装的 200V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌