Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

文件：100.63 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

文件：100.63 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.39 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Lower Gate Charge Qg Results in Simpler Drive Reqirements • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supp

文件：2.67683 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High

文件：97.08 Kbytes 页数：8 Pages

IRF

SMPS MOSFET

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High

文件：181.42 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High

文件：97.08 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=16A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =460mΩ(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.37 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=16A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.17Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.44 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：194.73 Kbytes 页数：11 Pages

IRF