Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Con

文件：211.47 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤32mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable

文件：338.66 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor

文件：166.87 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 95A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.9mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.9 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFETPower MOSFET

文件：260.12 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：137.03 Kbytes 页数：8 Pages

IRF

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at lower di

文件：128.639 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：135.44 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：135.44 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power sw

文件：160.96 Kbytes 页数：9 Pages

IRF