Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

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IRF

N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET

DESCRIPTION The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

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STMICROELECTRONICS

意法半导体

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

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IRF

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

文件：274.61 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

文件：274.61 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

文件：175.46 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

文件：147.97 Kbytes 页数：10 Pages

IRF

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

文件：274.61 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

文件：274.61 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

文件：274.61 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司