Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

Applications 1.
Switch Mode Power Supply ( SMPS ) 2.
Uninterruptible Power Supply 3. High Speed Power Switching Benefits 1.
Low Gate Charge Qg results in Simple Drive Requirement 2.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness 3.
Fully Characterized Capacitan

文件：106.54 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

Applications 1.
Switch Mode Power Supply ( SMPS ) 2.
Uninterruptible Power Supply 3. High Speed Power Switching Benefits 1.
Low Gate Charge Qg results in Simple Drive Requirement 2.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness 3.
Fully Characterized Capacitan

文件：106.54 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

文件：98.6 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

文件：98.6 Kbytes 页数：8 Pages

IRF

HEXFET짰Power MOSFET

Applications • High frequency DC-DC converters • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

文件：133.33 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

文件：171.92 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：4.62363 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：599.86 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：599.86 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

文件：310.72 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司