isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 95A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.9mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.9 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：333.29 Kbytes 页数：2 Pages

ISC

无锡固电

60V 单个 N 通道 HEXFET Power MOSFET, 采用无铅 TO-220AB 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Silicon optimized for applications switching below <100KHz\n• Softer body-diode compared to previous silicon g;

Infineon

英飞凌

Brushed motor drive applications

文件：532.97 Kbytes 页数：10 Pages

IRF

Brushed motor drive applications

文件：532.97 Kbytes 页数：10 Pages

IRF