丝印：FB4110；Package：TO-220；100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dv/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability * Lead Free * RoHS Compliant, Halogen-Free * VDS (V) =100V * ID = 120 A (VGS = 10V) * R DS(ON)

文件：843.85 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：FB4110；Package：TO-220；100 V N-Channel MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced bod

文件：815.41 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

文件：261.399 Kbytes 页数：8 Pages

VBSEMI

微碧半导体