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BD540A

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

BD540A

iscSiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •ComplementtoTypeBD539A APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD540B

iscSiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) •ComplementtoTypeBD539B APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD540B

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

BD540B

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

BD540C

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

BD540C

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

BD540C

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD540S

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD540T

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD540YS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD540YS

5.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

BD540YT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200Volts CURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinl

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BFG540

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG540

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

BFG540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG540

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG540

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFG540

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFG540

NPN9GHzWidebandTransistor

■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

详细参数

  • 型号:

    IRF540NSTRL

  • 功能描述:

    MOSFET MOSFT 100V 33A 44mOhm 47.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON
21+
TO-263
7200
绝对原装INFINEON正品现货,12年信誉保证只做原装、一定有货!张小姐电话:0755-82797778 13692179527微信同号,欢迎查询!
询价
英飞凌
21+
D2PAK
6000
全新原装,只做原装
询价
INFINEON
21+/22+
73500
原装正品
询价
IR
23+
TO-263
12000
保证进口原装现货假一赔十
询价
IR
2020+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2020+
TO-263
22000
全新原装正品 现货库存 价格优势
询价
INFINEON/英飞凌
23+
TO-263
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
询价
INFINEON
21+
TO-263
30000
只做原装 只有原装
询价
INFINEON
新年份
N/A
20000
原装现货,质量保证,可出样品可开税票
询价
INFINEON/IR
1907+
NA
4800
20年老字号,原装优势长期供货
询价
更多IRF540NSTRL供应商 更新时间2024-5-16 17:56:00