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IIPP60R190P6	文件：338.68 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW60R190P6	文件：335.86 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA60R190P6	文件：3.10731 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPA60R190P6	文件：3.09742 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPA60R190P6	文件：270.13 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB60R190P6	文件：3.10731 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPB60R190P6	文件：189.53 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB60R190P6	文件：33.26 Kbytes Page：1 Pages	MaterialContentDataSheet	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP60R190P6	文件：3.10731 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP60R190P6	文件：1.47544 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS™P6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhigh	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP60R190P6	文件：338.68 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPW60R190P6	文件：3.10731 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPW60R190P6	文件：2.63097 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPW60R190P6	文件：335.86 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPX60R190P6	文件：3.10731 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	IPW60R190P6IC	INFINEON/英飞凌	23+	TO-247	8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IPW60R190P6IC	INFINEON/英飞凌	23+	TO-247	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IPW60R190P6IC	INFINEON/英飞凌	23+	TO-247	7000		询价
深圳市凯斯宇科技有限公司	IPW60R199CP	INFINEON	2022	TO-247	240	原厂原装正品,价格超越代理	询价
深圳市恒创达实业有限公司	IPW60R199CP	Infineon	17+	TO-247	6200		询价
千层芯半导体(深圳)有限公司	IPW60R199CP	Infineon	17+	TO220-3	17900	MOSFET管	询价
深圳市博浩通科技有限公司	IPW60R199CP	INFINEON	23+	PG-TO247-3-1	8600	全新原装现货	询价
深圳市卓越微芯电子有限公司	IPW60R199CP	INFINEO	2020+	TO-247	1284	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市科恒伟业电子有限公司	IPW60R199CP	INFINEO	2016+	TO-247	6528	房间原装进口现货假一赔十	询价
深圳市达恩科技有限公司	IPW60R199CP	Infineon	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价

更多IPW60R190P6IC供应商更新时间2024-9-26 15:00:00

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