HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

文件：459.66 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

文件：328.55 Kbytes 页数：18 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：491.79 Kbytes 页数：17 Pages

INFINEON

英飞凌

600 V高边和低边驱动器IC， 具有关断功能

600 V 高边和低边驱动器 IC,具有典型的 2.5 A 拉电流和 2.5 A 灌电流，采用 14 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 16 引脚 SOICWB 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 提供完全运行时的电压高达+500 V 的版本 (IR2110 )\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：10 至 20V\n• 双通道欠压锁定\n• 3.3 V 逻辑兼容\n• 独立的逻辑供电电压范围：3.3 V 至 20 V\n• 逻辑和电源接地 +/- 5 V 偏移\n• 具有下拉的 CMOS 施密特触发输入\n• 逐周期边缘触发关断逻辑\n• 双通道的匹配传播延迟\n• 输出与输入同相\n\n优势:;

Infineon

英飞凌

Package：14-DIP（0.300"，7.62mm）；包装：散装 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14DIP

INFINEON

英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

文件：328.55 Kbytes 页数：18 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

文件：328.55 Kbytes 页数：18 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LST

文件：128.169 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2113L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LST

文件：147.28 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

文件：328.55 Kbytes 页数：18 Pages

IRF