IR2113E6中文资料IRF数据手册PDF规格书

描述 Description

The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

特性 Features

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 10 to 20V

Undervoltage lockout for both channels

Separate logic supply range from 5 to 20V Logic and power ground ±5V offset

CMOS Schmitt-triggered inputs with pull-down

Cycle by cycle edge-triggered shutdown logic

Matched propagation delay for both channels

Outputs in phase with inputs