3-PHASE BRIDGE DRIVER

Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down

文件：306.27 Kbytes 页数：26 Pages

Infineon

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down

文件：639.79 Kbytes 页数：21 Pages

IRF

3-PHASE BRIDGE DRIVER

文件：298.48 Kbytes 页数：26 Pages

IRF

3-PHASE BRIDGE DRIVER

文件：304.05 Kbytes 页数：26 Pages

IRF

600 V 三相栅极驱动器IC，具有过电流保护、OPAMP和故障报告功能

600 V 三相驱动器 IC,具有典型的 0.25 A 拉电流和 0.5 A 灌电流，采用 28 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 44 引脚 PLCC 和 28 引脚 SOIC WB 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：10 至 20V\n• 全通道欠压锁定\n• 典型死区时间 2.5 µs (IR2130)\n• 提供典型死区时间 0.8 µs (IR2132) 选项\n• 过流关断会关闭所有六个驱动器\n• 独立半桥驱动器\n• 全通道匹配传播延迟\n• 2.5 V 逻辑兼容\n• 输出与输入不同相\n• 防止交叉传导逻辑\n\n优势:;

Infineon

英飞凌

Package：28-DIP（0.600"，15.24mm）；包装：散装 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 28DIP

Infineon

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR21303C is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V l

文件：247.18 Kbytes 页数：21 Pages

IRF

3-PHASE DRIVER

DESCRIPION The IR2130D is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5V CMOS or LSTTL outputs. A g

文件：170.13 Kbytes 页数：21 Pages

IRF

3-PHASE BRIDGE DRIVER

Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down

文件：306.27 Kbytes 页数：26 Pages

Infineon

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down

文件：306.27 Kbytes 页数：26 Pages

Infineon

英飞凌