N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.86 Kbytes 页数：2 Pages

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无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

文件：3.10731 Mbytes 页数：19 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：3.09742 Mbytes 页数：19 Pages

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS=500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.19Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：270.13 Kbytes 页数：2 Pages

ISC

无锡固电