HIGH AND LOW SIDE DRIVER

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard

文件：148.56 Kbytes 页数：14 Pages

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英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard

文件：209.22 Kbytes 页数：15 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard

文件：138.73 Kbytes 页数：13 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：144.27 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER Product Summary

文件：144.27 Kbytes 页数：14 Pages

IRF

600 V 高边和低边栅极驱动器 IC

600 V 高边和低边驱动器 IC,具有典型的 0.21 A 拉电流和 0.36 A 灌电流，采用 8 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 8 引脚 SOIC 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 +600 V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动电源范围：10 至 20V\n• 欠压锁定\n• 3.3V、5V 和 15V 逻辑输入兼容\n• 双通道的匹配传播延迟\n• 输出与输入不同相或与输入 (IR2101 ) 同相\n\n优势:;

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英飞凌

Package：8-DIP（0.300"，7.62mm）；包装：散装 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8DIP

INFINEON

英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard

文件：209.22 Kbytes 页数：15 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard

文件：209.22 Kbytes 页数：15 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard

文件：148.56 Kbytes 页数：14 Pages

INFINEON

英飞凌