APR345K6TR-G1

Marking：GB1；Package：SOT26；SECONDARY SIDE SYNCHRONOUS RECTIFICATION CONTROLLER

STGB10H60DF

Marking：GB10H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STGB10HF60KDT4

Marking：GB10HF60KD；Package：D2PAK；10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STGB10HF60KDT4

Marking：GB10HF60KD；Package：D2PAK；10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STGB10NB37LZ

Marking：GB10NB37LZ；Package：D2PAK；10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STGB10NB37LZT4

Marking：GB10NB37LZ；Package：D2PAK；10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STGB10NC60HDT4

Marking：GB10NC60HD；Package：D2PAK；600 V - 10 A - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov

STGB10NC60KDT4

Marking：GB10NC60KD；Package：D2PAK；10 A, 600 V short-circuit rugged IGBT

Description ThesedevicesareveryfastIGBTsdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features Lowe

STGB15H60DF

Marking：GB15H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STGB18N40LZT4

Marking：GB18N40LZ；Package：D2PAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange.